Œ`Ž®
Series
Š‘®ü‹æ
Belonging Route
•Ò¬[F]
Formations
§Œä‘•’ui‘•”õ—¦[%]j
Control System(Equip Rate)
ŽÔ‘̍\‘¢i‘•”õ—¦[%]j
Frame Structure(Equip Rate)
İĞ”[˜A]
Enrollment
¼_EŽRŽèü
Seishin-Yamate line
Seishin01`18

GTO-VVVF§Œäi39j
Gate Turn Off thyristor-Variable Voltage Variable Frequency(39)

IGBT-VVVF§Œäi61j
Insulated Gate Bipolar Transistor-Variable Voltage Variable Frequency(61)

ƒAƒ‹ƒ~‡‹à»
Aluminum Alloy
108
Seishin19`22 IGBT-VVVF§Œäi100j
Insulated Gate Bipolar Transistor-Variable Voltage Variable Frequency(100)
ƒAƒ‹ƒ~‡‹à»
Aluminum Alloy
24
Seishin23`28 GTO-VVVF§Œäi100j
Gate Turn Off thyristor-Variable Voltage Variable Frequency(100)
ƒAƒ‹ƒ~‡‹à»
Aluminum Alloy
36
ŠCŠİü
Kaigan line
Kaigan01`10 IGBT-VVVF§Œäi100j
Insulated Gate Bipolar Transistor-Variable Voltage Variable Frequency(100)
ƒAƒ‹ƒ~‡‹à»
Aluminum Alloy
40
‡ŒvİĞ”[˜A]
Total Enrollment
208

‘ŠŒİ’¼’Ê‹æŠÔ
Through Trains
–k‘åã‹}s“d“S
Kita-Osaka Kyuko
Œ`Ž®
Series
Š‘®ü‹æ
Belonging Route
•Ò¬[F]
Formations
§Œä‘•’ui‘•”õ—¦[%]j
Control System(Equip Rate)
ŽÔ‘̍\‘¢i‘•”õ—¦[%]j
Frame Structure(Equip Rate)
İĞ”[˜A]
Enrollment

–k_ü
Hokushin line
Hokushin1`5

GTO-VVVF§Œäi40j
Gate Turn Off thyristor-Variable Voltage Variable Frequency(40)

SiC-VVVF§Œäi60j
Silicon Carbide Hybrid Module-Variable Voltage Variable Frequency Control(60)

ƒAƒ‹ƒ~‡‹à»
Aluminum Alloy
30
‡ŒvİĞ”[˜A]
Total Enrollment
30